Samsung and SK Hynix upgrade China plants for denser NAND chips

The memory makers are refitting Chinese factories for NAND with more than 200 layers while navigating US equipment controls.

By TomorrowNews · AI-assisted briefing
Source published 21 Oct 2026 · Briefing published 22 October 2026

Original conceptual stack of multilayer memory dies above a semiconductor wafer — AI-generated illustration — not a photograph of the event. Generic multilayer-memory concept, not an official product rendering. · TomorrowNews / AI-generated illustration

Reuters reported that Samsung is converting its Xian facility toward 286-layer V9 NAND, while SK Hynix is preparing Dalian production at 240 layers or more. Higher layer counts can increase storage density and reduce cost.

Both companies said equipment installation is being coordinated with the US government. Reuters could not determine the full scope of export licences, and US policy still distinguishes operating existing plants from expanding capacity or upgrading technology.

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